ACTA

Nonlinear Zeeman Splitting of Holes in Doped GaAs Heterostructures

M. Kubisa^a, K. Ryczko^a, J. Jadczak^a, L. Bryja^a, J. Misiewicz^a and M. Potemski^b
^aInstitute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
^bGrenoble High Magnetic Field Laboratory, CNRS, Grenoble, France

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Polarization-resolved photoluminescence from two-dimensional GaAs/GaAlAs heterostructures doped with acceptors was studied in high magnetic fields. Measurements were carried out in low temperatures up to 2 K and magnetic field up to 21 T. Experiments performed in the Faraday configuration enabled to resolve hole states with different spin orientation. We observed a nonlinear behavior of valence-band g factor in strong magnetic fields. To explain obtained results, a detailed theoretical calculation was carried out based on the Luttinger model for valence-band states. We examined the spin splitting of hole levels under the influence of both external magnetic field and built-in electric field existing in doped heterostructures. Changes of hole g factor with the width of the structure and the density of two-dimensional carriers are discussed.

DOI: 10.12693/APhysPolA.119.609
PACS numbers: 75.75.-c