Nonlinear Zeeman Splitting of Holes in Doped GaAs Heterostructures
M. Kubisaa, K. Ryczkoa, J. Jadczaka, L. Bryjaa, J. Misiewicza and M. Potemskib
aInstitute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
bGrenoble High Magnetic Field Laboratory, CNRS, Grenoble, France
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Polarization-resolved photoluminescence from two-dimensional GaAs/GaAlAs heterostructures doped with acceptors was studied in high magnetic fields. Measurements were carried out in low temperatures up to 2 K and magnetic field up to 21 T. Experiments performed in the Faraday configuration enabled to resolve hole states with different spin orientation. We observed a nonlinear behavior of valence-band g factor in strong magnetic fields. To explain obtained results, a detailed theoretical calculation was carried out based on the Luttinger model for valence-band states. We examined the spin splitting of hole levels under the influence of both external magnetic field and built-in electric field existing in doped heterostructures. Changes of hole g factor with the width of the structure and the density of two-dimensional carriers are discussed.
DOI: 10.12693/APhysPolA.119.609
PACS numbers: 75.75.-c