Light-Emitting Diode Degradation and Low-Frequency Noise Characteristics |
| B. Šaulys, J. Matukas, V. Palenskis, S. Pralgauskaitė and G. Kulikauskas
Radiophysics Dep., Vilnius University, Saulėtekio av. 9 (III), LT-10222 Vilnius, Lithuania |
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| Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated 1/fα type optical and electrical fluctuations come out. |
| DOI: 10.12693/APhysPolA.119.514 PACS numbers: 72.70.+m, 74.40.-n, 85.30.-z, 85.60.Jb |