Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals |
| N.M. Gasanlya and T. Yildirimb
aDepartment of Physics, Middle East Technical University, 06531 Ankara, Turkey bDepartment of Physics, Nevşehir University, 50300 Nevşehir, Turkey |
| Received: September 19, 2010 |
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| Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s-1. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 1013 and 3.4 × 1012 cm-3) and capture cross section (4.1 × 10-28 and 2.9 × 10-26 cm2) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. |
| DOI: 10.12693/APhysPolA.119.437 PACS numbers: 71.55.-i, 72.20.Jv, 72.80.Jc |