Comparison of Ultrafast Photodetectors Based on N+GaAs and LT GaAs |
| M. Białous, R. Mogilinski, M. Wierzbicki, K. Świtkowski and B. Pura
Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland |
| Received: March 13, 2009; in final form: November 22, 2010 |
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| We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice. |
| DOI: 10.12693/APhysPolA.119.382 PACS numbers: 78.20.-e, 78.47.J-, 78.70.Ck |