Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound |
| S. Saloum and B. Alkhaled
Atomic Energy Commission of Syria (AECS), Physics Department, P.O. Box 6091, Damascus, Syria |
| Received: May 2, 2010; in final form: November 23, 2010 |
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| Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N2/HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infra-red spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported. |
| DOI: 10.12693/APhysPolA.119.369 PACS numbers: 52.77.Dq, 81.15.Gh, 73.20.At, 78.20.Ci, 84.37.+q |