High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
P. Shiktorov a, E. Starikov a, V. Gružinskis a, L. Varani b and L. Reggiani c
aSemiconductor Physics Institute, A. Goštauto 11, LT 01108 Vilnius, Lithuania
bInstitut d'Électronique du Sud (CNRS UMR 5214), Université Montpellier II, 34 095 Montpellier Cedex 5, France
cDipartimento di Ingegneria dell'Innovazione and CNISM, Università del Salento, Via Arnesano s/n, 73100 Lecce, Italy
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The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
DOI: 10.12693/APhysPolA.119.117
PACS numbers: 72.20.Ht, 72.30.+q, 72.70.+m