Physics of THz Field-Effect Transistors
J. Łusakowski
Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
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Field-effect transistors are nowadays considered as possible elements of THz detection and emission systems. Their THz performance is governed by excitations of two-dimensional plasma in the transistor channel. The paper discusses peculiarities of the photon-plasmon coupling mechanism in field-effect transistors and puts it in the perspective of classical investigation of plasma excitations in two-dimensional systems.
DOI: 10.12693/APhysPolA.119.114
PACS numbers: 73.20.Mf, 52.75.-d