ACTA

Characterization of Optical and Photoelectrical Properties of ZnO Crystals

P. Onufrijevs^{a, b}, T. Serevičius^a, P. Scajev^a, G. Manolis^a, A. Medvids^b, L. Chernyak^c, E. Kuokstis^a, C.C. Yang^d and K. Jarasiunas^a
^aInstitute of Applied Research, Vilnius University, Saulėtekio al. 9-III, LT 10222, Vilnius, Lithuania
^bInstitute of Technical Physics, Riga Technical University, 14, Azenes Str., LV-1048, Riga, Latvia
^cPhysics Department, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida, 32816, USA
^dInstitute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Taipei, Taiwan

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We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.

DOI: 10.12693/APhysPolA.119.274
PACS numbers: 78.15.+e, 78.45.+h, 78.30.Fs