The Time Dynamics Research of Coherent State in Semiconductors by Excitation of Femtoseconds Pulses
V.N. Trukhina and A.S. Buyskikha, b
aA.F. Ioffe Physical Technical Institute, 194021 St. Petersburg, Russia
bSt. Petersburg State Polytechnic University, 194021 St. Petersburg, Russia
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In this article we present results of research of coherent processes of the ultrashort pulse light reemission in semiconductors. The time dynamics of the amplitude and the phase of the probe light wave reflected from the surface of low temperature GaAs was researched by the pump-probe method. The photodetector sensed the interference figure which shows interaction between probe pulse and pump pulse and also between probe pulse and excited by the pump coherent states in the semiconductor. The pulses wavelength is 800 nm and the pulses width is 15 fs. Thus the energy of excited photoelectrons was higher than conduction-band bottom by 60 to 140 meV. Due to the short duration of the pulse we could observe the coherent scattering of ultrashort light pulses at the room temperature. The impulse relaxation time for photoelectrons was determined by the experiments and it was 40 fs.
DOI: 10.12693/APhysPolA.119.265
PACS numbers: 06.60.Jn, 78.47.jh, 82.53.Kp, 78.45.+h