Fabrication and Study of the Organic-Inorganic Semiconductor Diodes Formed on n-Si
B. Vengalisa, K. Šliužienėa, V. Lisauskasa, G. Grigaliūnaitė-Vonsevičienėb, R. Butkutėc, R. Lygaitisc and J.V. Gražulevičiusc
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, LT 01108 Lithuania
bVilnius Gediminas Technical University, Saulėtekio al. 11, LT-10223 Vilnius, Lithuania
cFaculty of Chemical Technology, Kaunas University of Technology, Radvilenu 19, LT-50254, Kaunas, Lithuania
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We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively.
DOI: 10.12693/APhysPolA.119.262
PACS numbers: 73.61.Ph, 73.40.Lq, 73.40.Ei, 73.40.Ns