LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields |
| R. Raguotis and R. Brazis
Semiconductor Physics Institute of the Center for Physical Sciences and Technology, A. Goštauto g. 11, LT 01108 Vilnius, Lithuania |
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| Electron and phonon distribution in momentum space is modeled using Monte Carlo method. Calculated LO phonon distribution in zinc-blende GaN deviates dramatically from the thermal equilibrium (Planck) function, and well coincides with the phonon number elucidated from the existing anti-Stokes Raman scattering experiments. |
| DOI: 10.12693/APhysPolA.119.247 PACS numbers: 78.45.+h, 78.30.-j, 42.55.-f, 72.10.-d, 72.20.Ht |