Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels
L. Ardaravičius, O. Kiprijanovič and J. Liberis
Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
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Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al0.8In0.2N/AlN/GaN and nearly lattice matched Al0.84In0.16N/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform: electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × 107 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.
DOI: 10.12693/APhysPolA.119.231
PACS numbers: 73.50.Fq, 73.40.Kp