Low Temperature Overheating Effect in SiGe p-Type Quantum Wells. Methods of the Hole-Phonon Energy Relaxation Time Determination
I.B. Berkutov
B.I. Verkin Institute for Low Temperature Physics and Engineering of NAS of Ukraine, 47, Lenin Ave., Kharkov, 310164, Ukraine
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The temperature dependence of the hole-phonon energy relaxation time τhph (T) under hot-hole conditions was studied in SiGe p-type quantum wells. The hot-hole temperature Th was estimated through three different experimental methods: (i) from a comparison of the amplitude of the Shubnikov-de Haas oscillations changed by current and temperature; (ii) from a comparison of the phase relaxation time in the effect of weak localization obtained either at different temperatures and minimum current or at different current at a fixed temperature; (iii) from a comparison of the temperature and current dependences of the sample resistance. The values of Th obtained by all three different methods were used to calculate, from the heat balance equation, the temperature dependence of the hole-phonon energy relaxation time τhph (T). All three temperature dependences τhph (T) were almost identical and demonstrated transition of the 2D system from "partial inelasticity" to small angle scattering at lower temperatures.
DOI: 10.12693/APhysPolA.119.228
PACS numbers: 72.15.Lh, 72.20.Ht, 72.20.My