Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

T. Laurenta, R. Sharma a, J. Torres a, P. Nouvel a, S. Blin a, L. Chusseau a, C. Palermo a, L. Varani a, Y. Cordier b, M. Chmielowska b, J.-P. Faurie c, B. Beaumont c, P. Shiktorov d, E. Starikov d and V. Gruzinskis d aInstitut d'Electronique du Sud, UMR 5214 - CNRS/Université Montpellier 2, Pl. E. Bataillon, 34095 Montpellier, France bCentre de Recherche sur l'Hétéro-Epitaxie et ses Applications, UPR 10 - CNRS, R. Bernard Grégory, 06560 Valbonne, France cLUMILOG, 2720, Ch. Saint Bernard Les Moulins I, 06220 Vallauris, France dSemiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania

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We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.

DOI: 10.12693/APhysPolA.119.107 PACS numbers: 78.20.-e, 78.67.De, 73.21.Fg