Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

V. Gružinskis, P. Shiktorov and E. Starikov Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

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Electron transport and drain current noise in field effect transistor with n+ nn+ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.

DOI: 10.12693/APhysPolA.119.215 PACS numbers: 72.20.Ht, 72.30.+q