Efficient Terahertz Emission from InGaN/GaN Heterostructure
A. Reklaitis
Semiconductor Physics Institute, Centre for Physical Sciences and Technology, A. GoŇ°tauto 11, LT-01108 Vilnius, Lithuania
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Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.
DOI: 10.12693/APhysPolA.119.212
PACS numbers: 42.72.Ai, 73.20.Mf, 75.70.-i, 78.20.Bh, 78.47.-p