Small-Signal Characterization of FET/HEMT for Terahertz Applications
E. Starikov a, P. Shiktorov a, V. Gružinskis a, H. Marinchio b, P. Nouvel b, J. Torres b, C. Palermo b, L. Chusseau b, L. Varani b and P. Ziadé c
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
bInstitut d'Electronique du Sud (CNRS UMR 5214), Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France
cLaboratoire De Physique Appliquée, Faculté des Sciences II, Université Libanaise, Fanar, Lebanon
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Calculations of the small-signal response of InGaAs HEMTs by using the hydrodynamic approach coupled with a pseudo-2D Poisson equation are performed. The spectra of small-signal admittance and impedance are found to demonstrate series of the resonant peaks corresponding to excitation of plasma waves. Possibilities and conditions of instability onset and THz signal detection are discussed.
DOI: 10.12693/APhysPolA.119.203
PACS numbers: 72.20.Ht, 72.30.+q