THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors
P. Nouvel, J. Torres, H. Marinchio, T. Laurent, C. Palermo, L. Varani
Institut d'Electronique du Sud-UMR 5214, Montpellier, France
F. Teppe
Groupe d'Etude des Semiconducteurs-UMR 5650, Montpellier, France
P. Shiktorov, E. Starikov, and V. Gruzinskis
Semiconductor Physics Institute, A. Gostauto 11, Vilnius, Lithuania
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Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f0 ± 10 GHz (with f0 from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
DOI: 10.12693/APhysPolA.119.199
PACS numbers: 72.15.Nj, 72.20.Ht, 72.30.+q