Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
V. Nargelienėa, S. Ašmontasa, A. Čerškusa, b, J. Gradauskasa, c, J. Kundrotasa,c and A. Sužiedėlisa, c
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
bDepartment of General Physics, Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania
cVilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
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We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
DOI: 10.12693/APhysPolA.119.177
PACS numbers: 78.55.-m, 71.35.-y, 68.65.-k