Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

J. Kundrotasa, A. Čerškusa, J. Liberisa, A. Matulionisa, J.H. Leachb and A.H. Morkoçb aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania bDepartment of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA

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A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field near the heterostructure interface with the two-dimensional electron system are associated with nonlinear behaviour of recombination processes.

DOI: 10.12693/APhysPolA.119.173 PACS numbers: 78.55.-m, 78.66.-w, 71.55.Eq, 71.35.-y