Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
K. Poželaa, J. Poželaa, V. Jucienėa, I.S. Vasil'evskiib, G.B. Galievb, c, E.A. Klimovb,c, A. Sužiedėlisa, N. Žurauskienėa, V. Stankeviča, S. Keršulisa and Č. Paškeviča
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania
bNational Research Nuclear University MEPhI, Moscow 115409, Russia
cInstitute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow 117105, Russia
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The following peculiarities of electron transport in In0.53Ga0.47As/In0.52Al0.48As quantum wells with δ-Si-doped In0.52Al0.48As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In0.53Ga0.47As/In0.52Al0.48As quantum well, as well as increasing the InAs content in the modulation-doped In0.8Ga0.2As/In0.7Al0.3As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; And (4) microwave current oscillations in high electric fields.
DOI: 10.12693/APhysPolA.119.170
PACS numbers: 72.20.Ht, 72.10.Di, 73.21.Fg, 73.63.Hs, 73.40.Kp