ACTA

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

K. Požela^a, J. Požela^a, V. Jucienė^a, I.S. Vasil'evskii^b, G.B. Galiev^{b, c}, E.A. Klimov^b,c, A. Sužiedėlis^a, N. Žurauskienė^a, V. Stankevič^a, S. Keršulis^a and Č. Paškevič^a
^aSemiconductor Physics Institute, Center for Physical Sciences and Technology, Goštauto 11, Vilnius, Lithuania
^bNational Research Nuclear University MEPhI, Moscow 115409, Russia
^cInstitute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow 117105, Russia

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The following peculiarities of electron transport in In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells with δ-Si-doped In_0.52Al_0.48As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In_0.53Ga_0.47As/In_0.52Al_0.48As quantum well, as well as increasing the InAs content in the modulation-doped In_0.8Ga_0.2As/In_0.7Al_0.3As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; And (4) microwave current oscillations in high electric fields.

DOI: 10.12693/APhysPolA.119.170
PACS numbers: 72.20.Ht, 72.10.Di, 73.21.Fg, 73.63.Hs, 73.40.Kp