Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices
L. Subačiusa, R. Venckevičiusa, I. Kašalynasa, D. Seliutaa, G. Valušisa, J. Schmidtb, A. Lisauskasb, H.G. Roskosb, K. Alekseevc and K. Köhlerd
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
bPhysikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany
cDepartment of Physics, Lougborough University, Lougborough, LE113TU, United Kingdom
dFraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, D-79108 Freiburg, Germany
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Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al0.3Ga0.7As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
DOI: 10.12693/APhysPolA.119.167
PACS numbers: 68.65.Cd, 06.60.Jn, 73.90.+f