ACTA

Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

L. Subačius^a, R. Venckevičius^a, I. Kašalynas^a, D. Seliuta^a, G. Valušis^a, J. Schmidt^b, A. Lisauskas^b, H.G. Roskos^b, K. Alekseev^c and K. Köhler^d
^aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
^bPhysikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany
^cDepartment of Physics, Lougborough University, Lougborough, LE113TU, United Kingdom
^dFraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, D-79108 Freiburg, Germany

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Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_0.3Ga_0.7As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.

DOI: 10.12693/APhysPolA.119.167
PACS numbers: 68.65.Cd, 06.60.Jn, 73.90.+f