Photoreflectance of Epitaxial InGaAs Quantum Rods
R. Nedzinskasa, V. Karpusa, B. Čechavičiusa, J. Kavaliauskasa, G. Valušisa, L.H. Lib, S.P. Khannab and E.H. Linfieldb
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
bSchool of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
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Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an As4 source is used instead of an As2 source during the molecular beam epitaxial growth.
DOI: 10.12693/APhysPolA.119.164
PACS numbers: 78.67.Hc, 78.55.Cr, 81.05.Ea