Enhancement of the Excitonic Photoluminescence in n+/i-GaAs by Controlling the Thickness and Impurity Concentration of the n+ Layer
A. Čerškusa,b, V. Nargelienėa, J. Kundrotasa, c, A. Sužiedėlisa, c, S. Ašmontasa, J. Gradauskasa, c, A. Johannessend and E. Johannessend
aSemiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
bDepartment of General Physics, Vilnius Pedagogical University, Studentų 39, LT-08106 Vilnius, Lithuania
cVilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
dVestfold University College, Raveien 197, 3184 Borre, Norway
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This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, NSi = 1017 cm-3 and NSi = 1018 cm-3, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n+/i-GaAs homojunction are discussed.
DOI: 10.12693/APhysPolA.119.154
PACS numbers: 78.55.-m, 71.35.-y, 71.55.Eq