ACTA

Photoresponse of Porous Silicon Structures to Infrared Radiation

N. Samuolienė^a, E. Širmulis^b, J. Stupakova^a, J. Gradauskas^a, V. Zagadskij^a and E. Šatkovskis^a
^aVilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania
^bCentre for Physical Science and Technology, Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT-01108, Lithuania

Full Text PDF

Photoresponse of silicon samples containing porous structures have been studied under the action of CO₂ laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.

DOI: 10.12693/APhysPolA.119.137
PACS numbers: 78.67.Rb, 78.56.-a, 73.40.Lq