ACTA

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

P. Madejczyk^a, W. Gawron^a, A. Piotrowski^b, K. Kłos^b, J. Rutkowski^a and A. Rogalski^a
^aInstitute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
^bVigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland

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One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P⁺-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH₃ precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH₃ by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R₀A product of HgCdTe photodiodes in temperatures close to 230 K.

DOI: 10.12693/APhysPolA.118.1199
PACS numbers: 42.79.Pw, 07.57.Kp, 73.21.Cd, 78.67.Pt, 79.60.Jv