Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes
P. Madejczyka, W. Gawrona, A. Piotrowskib, K. Kłosb, J. Rutkowskia and A. Rogalskia
aInstitute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
bVigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
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One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P+-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R0A product of HgCdTe photodiodes in temperatures close to 230 K.
DOI: 10.12693/APhysPolA.118.1199
PACS numbers: 42.79.Pw, 07.57.Kp, 73.21.Cd, 78.67.Pt, 79.60.Jv