Effect of On-Site Coulomb Repulsion on Phase Transitions in Exactly Solved Spin-Electron Model
L. Gálisová a, J. Strečka b, A. Tanaka c and T. Verkholyak d
aDepartment of Applied Mathematics, Faculty of Mechanical Engineering, Technical University, Letná 9, 042 00 Košice, Slovak Republic
bDepartment of Theoretical Physics and Astrophysics, Faculty of Science, P.J. Šafárik University, Park Angelinum 9, 040 01 Košice, Slovak Republic
cDepartment of General Education, Ariake National College of Technology, Omuta, Fukuoka 836-8585, Japan
dInstitute for Condensed Matter Physics, National Academy of Sciences of Ukraine, 1 Svientsitskii Str., L'viv-11, 790 11, Ukraine
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A hybrid lattice-statistical model on doubly decorated planar lattices, which have localized Ising spins at their nodal lattice sites and two itinerant electrons at each pair of decorating sites, is exactly solved by the use of a generalized decoration-iteration transformation. Our main attention is focused on an influence of the on-site Coulomb repulsion on ground-state properties and critical behavior of the investigated system.
DOI: 10.12693/APhysPolA.118.942
PACS numbers: 05.50.+q, 05.70.Jk, 64.60.Cn, 64.60.De