The Study of Magnetization Process in Amorphous FeNiSiB Microwires
J. Gamcovaa, R. Vargaa, B. Hernandob and A. Zhukovc
aInstitute of Physics, Faculty of Sciences, P.J. Safarik University, Park Angelinum 9, 041 54 Kosice, Slovakia
bFisica, Universidad de Oviedo, Oviedo, Asturias, Spain
cDept. Fisica de Materiales, Fac. Quimica, UPV/EHU, San Sebastian, Spain
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We have studied the magnetization process in amorphous Fe49.6Ni27.9Si7.5B15 microwire. It was found that the hysteresis mechanism consists of two contributions: magnetoelastic and structural relaxation. It was shown that at low frequencies, the magnetization process is controlled mainly by the structural relaxation. At higher frequencies (above 50 Hz), the relaxation effect disappears and switching field is determined mainly by the magnetoelastic contribution. Moreover, the effect of thermal treatment at temperature 300°C has been studied. As-cast microwire is almost unsensible to the applied tensile stress since the applied stresses are lower than that induced during production. After annealing, the stresses relax and stress sensibility of microwires increases.
DOI: 10.12693/APhysPolA.118.807
PACS numbers: 75.50.Kj, 75.60.Ej, 75.60.Jk