Physical Properties of "HTSC/Photosemiconductor" Micro- and Nanoplates Based Junctions
V. Bundaa, S. Bundaa, F. Vashchuka, A. Feherb and J. Kováčc
aFaculty of Information Sciences, Transcarpathian State University, Zankovetska St. 89-A, Uzhgorod 88 015, Ukraine
bCentre of Low Temperature Physics, Faculty of Science, P.J. Šafarik University, Park Angelinum 9, Kosice 04154, Slovakia
cInstitute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, Kosice, Slovakia
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In this paper we report the formation process and electrophysical properties of "high temperature superconductor (YBa2Cu3O7 - x)/photosemiconductor (BiOCl:Ti)" micro- and nanoplates based junction. The energy band model of ≪HTSC-semiconductor≫ junction is proposed.
DOI: 10.12693/APhysPolA.118.1040
PACS numbers: 85.25.Hv, 74.45.+c, 74.25.F-, 74.55.+v