The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films
K. Benzhoura, J. Szatkowskib, F. Rozpłochb and K. Stecb
aDepartment of Bases of Theoretical Biomedical Studies and Medical Computer Science, Collegium Medicum, Nicolaus Copernicus University, Jagiellońska 13, 85-067 Bydgoszcz, Poland
bInstitute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
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Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
DOI: 10.12693/APhysPolA.118.447
PACS numbers: 68.55.A-