Current-Voltage Characteristics of Nanowires Formed at the Co-Ge99.99Ga0.01 Interface

M. Wawrzyniaka, M. Maćkowski a, Z. Śniadecki b, B. Idzikowski b, and J. Martinek b aFaculty of Electronics and Telecommunications, Poznań University of Technology, Piotrowo 3A, 60-965 Poznań, Poland bInstitute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

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We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the Co-Ge99.99Ga0.01 interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and Ge99.99Ga0.01. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.

DOI: 10.12693/APhysPolA.118.375 PACS numbers: 68.65.-k, 79.60.Jv, 73.63.Rt