Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

D.Y. Kima, G.S. Kima, S.M. Jeona, M.Y. Choa, H.Y. Choia, M.S. Kima, D.-Y. Leeb, J.S. Kimc, J.S. Kimd, G.-S. Eome, J.-Y. Leema a Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea b Lighting Module Research and Development, Samsung Electro-Mechanics Co., Ltd., Suwon 443-373, Korea c Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Korea d Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea e Division of General Education, Uiduk University, Gyeongju 780-713, Korea

Received: June 18, 2009

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Multi-stacked InAs QDs embedded in ten periods of GaAs/In0.1Ga0.9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0.1Ga0.9As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.

DOI: 10.12693/APhysPolA.117.941 PACS numbers: 78.67.Hc, 78.55.Cr, 81.05.Ea