Simulations of Si and SiO2 Etching in SF6+O2 Plasma |
| R. Knizikevičius
Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania |
| Received: July 4, 2008; revised version November 23, 2009; in final form December 1, 2009 |
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| The plasma chemical etching of Si and SiO2 in SF6+O2 plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and SiO2 etching rates. It is found that the reaction probabilities of F atoms with Si atoms and SiO2 molecules are equal to ε = (8.75 ± 0.41) × 10-3 and ε = (7.18 ± 0.45) × 10-5, respectively. The influence of O2 addition to SF6 plasma on the etching rate of Si is determined. |
| DOI: 10.12693/APhysPolA.117.478 PACS numbers: 52.77.Bn, 81.65.Rv |