ACTA

A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

M.A. Pietrzyk^a, B.J. Kowalski^a, B.A. Orlowski^a, W. Knoff^a, T. Story^a, W. Dobrowolski^a, V.E. Slynko^b, E.I. Slynko^b and R.L. Johnson^c
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bChernivtsi Branch of the Institute for Materials Science Problems, National Academy of Sciences of Ukraine, 5 Vilde Str., 58001 Chernivtsi, Ukraine
^cInstitute of Experimental Physics, University of Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany

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In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.

DOI: 10.12693/APhysPolA.117.293
PACS numbers: 79.60.-i, 71.20.Mq, 71.20.Be