Optical Investigation of ZnO Nanowires

G. Martınez-Criadoa, M. Hernández-Vélezba, I. Letardaa, A. Crosc c, A. Cantareroc c, I. Mınguez Bacho b, J. Susini a, R. Tucoulou a, J.A. Sans a, R. Sanz b and M. Vázquez b a European Synchrotron Radiation Facility, Experiments Division, 38043 Grenoble, France b Materials Science Institute, CSIC Madrid, 28049 Cantoblanco, Spain, c Department of Applied Physics, Valencia University, 46100 Burjasot, Spain

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In this study we report the application of synchrotron X-ray fluorescence, photoluminescence and Raman scattering techniques to the analysis of the incorporation of impurities in unintentionally doped ZnO nanowires. Highly ordered one dimensional ZnO arrays were fabricated by an oxidation process of Zn metal electrodeposited in nanoporous anodic alumina template. X-ray fluorescence data show the contribution of residual elements into the ZnO nanowires growth. A rough analytical quantification of the main light and heavy chemical contents derives impurity concentrations below 1%. The optical efficiency of ZnO nanowires is strongly affected by non radiative centers up to temperatures as low as 100 K. The photoluminescence was found to be totally dominated by optical transitions associated with the anodic alumina template. Finally, the Raman scattering provides no evidence of local vibrational modes or secondary phases, but it shows the unambiguous signature of the ZnO hexagonal phase.

DOI: 10.12693/APhysPolA.117.369 PACS numbers: 85.75.-d, 61.10.Ht, 78.70.En, 81.05.Ea