Defect Structure of High-Temperature-Grown GaMnSb/GaSb

P. Romanowskia, J. Bak-Misiuka, E. Dynowskaa, J.Z. Domagalaa, J. Sadowskia, b, T. Wojciechowskia, A. Barcza, c, R. Jakielaa and W. Caliebed a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warsaw, Poland b Lund University, MAX-lab, Ole Romers vag 1, SE-22363 Lund, Sweden c Institute of Electron Technology, al. Lotników 32/46, PL-02-668 Warsaw, Poland d HASYLAB at DESY, Notkestr. 85, D-22603 Hamburg, Germany

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GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.

DOI: 10.12693/APhysPolA.117.341 PACS numbers: 61.05.cp, 68.37.Hk, 68.49.Sf, 68.55.ag, 68.55.Ln