The Simulation of Bragg-Case Section Images οf Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals |
| T. Balcera, W. Wierzchowskia and K. Wieteskab
a Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland b Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland |
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| The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG. |
| DOI: 10.12693/APhysPolA.117.336 PACS numbers: 61.72.Ff, 61.72.up |