Composition and Structure of Czochralski Silicon Implanted with H2+ and Annealed under Enhanced Hydrostatic Pressure

M. Kulika, A.P. Kobzevb, A. Misiukc, W. Wierzchowskid, K. Wieteskae and J. Bak-Misiukf a Institute of Physics, Maria Curie-Skłodowska University, pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland b Joint Institute for Nuclear Research JINR, Joliot-Curie 6 st., 141980 Dubna, Moscow Region, Russia c Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland d Institute of Electronic Materials Technology, 01-919 Warsaw, Poland e Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland f Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as H+) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with H2+; Fluence D = 1.7 × 1017 cm-2, energy E = 50 keV (projected range of H2+, Rp(H) = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.

DOI: 10.12693/APhysPolA.117.332 PACS numbers: 61.72.U-, 61.72.uf, 66.10.C-, 61.80.Jh, 81.20.-n, 82.80.Yc, 85.40.-e