Temperature Dependence of Magnetization Reversal οf Thin Manganite Film
L. Uspenskayaa, T. Nurgalievb and S. Mitevab
a Institute of Solid State Physics RAS, Chernogolovka, 142432 Moscow dist., Russia
b Institute of Electronics BAS, 1784 Sofia, Bulgaria
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The magnetic domain structure, its transformation with temperature, and the magnetization reversal in 20 nm La0.7Sr0.3MnO3 film grown on LaAlO3 substrate by off-axis magnetron sputtering at 700°C and post-annealed at 600°C were studied in a wide temperature range. The magnetic domains with either in-plane- or out-of-plane-orientation of the vector of spontaneous magnetization were observed in the same film depending on the prehistory. The domains with the in-plane magnetization were found to be more stable. Magnetization reversal of the film was shown to occur via the nucleation and motion of 180-degree head-to-head domain walls, the number and the type of which were found to be dependent on temperature. Moreover, the transition between two magnetization reversal regimes was found at 30 K.
DOI: 10.12693/APhysPolA.117.207
PACS numbers: 75.30.Gw, 75.30.Hx, 75.47.Lx, 75.60.Jk, 75.60.Lr, 75.70.Ak, 75.70.Kw