Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy 235U Ions
P. Poteraa, S. Ubizskiib, D. Sugakc and K. Schwartzd
a Institute of Physics, University of Rzeszow, Rejtana 16A, 35310 Rzeszow, Poland
b Lviv Polytechnic National University, 12, Bandera St., 79013 Lviv, Ukraine
c Scientific Research Company "Carat", 202, Stryjska St., 79031 Lviv, Ukraine
d Gesellschaft für Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt, Germany
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The present work is devoted to investigation of optical absorption in pure Gd3Ga5O12 (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the 235U ions irradiation with energy 2640 MeV and a fluence 109-1011 cm-2. The induced absorption for 109 cm-2 is caused by recharging of point defects, both growth ones and impurities. After irradiation by 235U ions with fluences starting from 3 × 109 cm-2 the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
DOI: 10.12693/APhysPolA.117.181
PACS numbers: 61.72.jn, 81.40.Wx, 61.80.Ba, 61.80.Jh, 61.72.J-