Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers |
| J. Prażmowska a, R. Korbutowicz a, M. Wośko a, R. Paszkiewicz a, J. Kovač b, c, R. Srnanek c and M. Tłaczała a
a Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland b Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia c International Laser Centre, Ilkovicova 3, 812 19 Bratislava, Slovakia |
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| Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al2O3. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa. |
| DOI: 10.12693/APhysPolA.116.S-123 PACS numbers: 81.10.Bk, 81.15.Gh, 81.15.Kk |