Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current |
| M. Pluska, A. Czerwinski, J. Ratajczak, A. Szerling and J. Kątcki
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform: cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained. |
| DOI: 10.12693/APhysPolA.116.S-86 PACS numbers: 78.60.Hk, 85.30.De, 61.72.-y |