LT-InGaAs Layer Grown for Near Surface SESAM Application |
| A. Jasik a, J. Muszalski a, M. Kosmala b and K. Pierściński a
a Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland b Warsaw University of Technology, pl. Politechniki 1, 00-661 Warsaw, Poland |
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| We have developed a mode-locked diode pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to AsGa0-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed. |
| DOI: 10.12693/APhysPolA.116.S-56 PACS numbers: 61.72.jj, 68.55ag, 68.65.Ac, 81.15.Hi, 81.65.Rv |