AC Conductivity and Dielectric Properties οf Amorphous Te42As36Ge10Si12 Glass |
| N.A. Hegaba and H.M. El-Mallahb
a Department of Physics, Faculty of Education, Ain Shams University, Roxy - Cairo, Egypt, b Department of Physics & Mathematical Engineering, Faculty of Engineering, Suez Canal University, Port-Said, Egypt |
| Received: September 25, 2008 |
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| Te42As36Ge10Si12 chalcogenide composition was prepared by conventional melt-quenching. The ac conductivity and the dielectric properties were carried out in the frequency range 0.5×103-4×106 Hz and temperature range 300-423 K. The analysis of the experimental results of the frequency dependence of ac conductivity σac (οmega) indicates that σac (οmega) is proportional to οmegas where s> 1. The temperature dependence of both ac conductivity and the parameter s is reasonably well interpreted by the correlated barrier hopping model. The maximum barrier height Wm calculated from ac conductivity and the density of localized states were determined. Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The analysis of dielectric loss leads to determine the barrier height Wm and agrees with that proposed by the theory of hopping of charge carriers over potential barrier between charged defect states as suggested by Elliott in case of chalcogenide glasses. |
| DOI: 10.12693/APhysPolA.116.1048 PACS numbers: 72.80.Ng, 77.22.-d |