Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers
A. Wierzbickaa, D. Lübbertb, J.Z. Domagałaa and Z.R. Zytkiewicza
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
b Humboldt Universität, Newtonstr. 15, 12489 Berlin, Germany
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X-ray rocking curve imaging technique was used to study crystallographic perfection of laterally overgrown epitaxial structures. We focus on rocking curve imaging studies of Si doped GaAs and GaSb laterally overgrown layers grown by liquid phase epitaxy on SiO2 masked GaAs and GaSb/GaAs substrates, respectively. High spatial resolution offered by rocking curve imaging technique allows studying the effect of laterally overgrown epitaxial wing tilt towards the mask. Distribution of tilt magnitude over the area of laterally overgrown epitaxial stripes is easily determined. In heteroepitaxial GaSb/GaAs laterally overgrown epitaxial structures local mosaicity in the wing area was detected. Since individual grains are clearly visible on rocking curve imaging maps, their size and relative misorientation can be determined.
DOI: 10.12693/APhysPolA.116.976
PACS numbers: 61.05.cp,, 81.15.Lm