On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and Cd0.99Mn0.01Te
J. Trzmiel, E. Płaczek Popko, E. Zielony and Z. Gumienny
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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The dielectric response of gallium doped Cd0.99Mn0.01Te and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for Cd0.99Mn0.01Te:Ga samples non Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
DOI: 10.12693/APhysPolA.116.956
PACS numbers: 71.55.Gs, 61.72.jj, 77.22.-d