Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes
P. Dyba, E. Płaczek Popko, E. Zielony, Z. Gumienny and J. Szatkowski
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańkiego 27, 50-370 Wrocław, Poland
Full Text PDF
Deep electron states in gallium doped CdTe have been studied by deep level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform: the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross sections have been determined from related Arrhenius plots. The dominant trap of activation energy E2 = 0.33 eV and capture cross section σ2 = 3 × 10-15 cm2 has been assigned to the gallium related DX center present in the CdTe material.
DOI: 10.12693/APhysPolA.116.944
PACS numbers: 81.05.Dz, 85.30.De, 84.37.+q