Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro Photoluminescence
R. Kudrawiecaezb, M. Heninic and M. Hopkinsond
a Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
b Institut Jaume Almera, Consell Superior d'Investigacions Científiques, 08028 Barcelona, Spain
c School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
d Department of Electronic and Electrical Engineering, University of Sheffield, S3 3JD Sheffield, United Kingdom
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GaInNAs bulk like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
DOI: 10.12693/APhysPolA.116.930
PACS numbers: 78.55.Cr, 78.66.Fd