ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
M.I. Łukasiewicza, B. Witkowskib, M. Godlewskia,b, E. Guziewicza, M. Sawickia, W. Paszkowicza, E. Łusakowskaa, R. Jakiełaa, T. Krajewskia, I.A. Kowalika and B.J. Kowalskia
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b Dept. of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
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We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform: films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
DOI: 10.12693/APhysPolA.116.921
PACS numbers: 68.55.Ln, 68.55.Nq, 78.66.Hf, 81.15.Kk