The Influence of Electric Field οn the Optical Spin Polarization of Electrons in a Diluted Magnetic Semiconductor

P.M. Gorleya, O.M. Mysliuka, V.K. Dugaevb, c, P.P. Horleyd, a, and J. Barnaśe a Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine b University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland c Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisbon, Portugal d Centro de Investigación en Materiales Avanzados, S.C., Chihuahua/Monterrey, Av. Miguel de Cervantes 120, 31-109 Chihuahua, Chih., México e A. Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

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In this paper we present the results of theoretical calculations for spin polarization η of band electrons in diluted magnetic semiconductor subjected to a polarized light wave and a carrier warming electric field E. It was shown that the maximum value of ηmax can be reached at a certain Emax corresponding to the peak of the carrier drift velocity v(E). For the higher doping impurity concentration, the values of ηmax become lower due to the equivalent decrease of electron temperature.

DOI: 10.12693/APhysPolA.116.909 PACS numbers: 72.25.Fe, 72.25.Rb, 72.25.-b